PART |
Description |
Maker |
M54516P |
5-UNIT 500MA DARLINGTON TRANSISTOR ARRAY
|
Mitsubishi Electric Semiconductor
|
M63834FP |
(M63834xP) 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY
|
Mitsubishi Electric
|
M54525P M54525 |
7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M54562WP |
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Semiconductor
|
M54563FP M54563P |
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M63840FP M63840KP M63840P |
8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode
|
Mitsubishi Electric Semiconductor
|
GMPSA13 |
The GMPSA13 is designed for darlington applications requiring extremely high current gain at collector to 500mA NPN SILICON DARLINGTON TRANSISTOR
|
E-Tech Electronics LTD GTM CORPORATION
|
D40C4 D45D2 D45D4 D45D6 D40C7 D40K4 D44D5 |
TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 500MA I(C) | TO-202AC TRANSISTOR | BJT | DARLINGTON | PNP | 50V V(BR)CEO | 6A I(C) | TO-220AB TRANSISTOR | BJT | DARLINGTON | PNP | 70V V(BR)CEO | 6A I(C) | TO-220AB TRANSISTOR | BJT | DARLINGTON | PNP | 90V V(BR)CEO | 6A I(C) | TO-220AB TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 500MA I(C) | TO-202 TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 2A I(C) | TO-202AC TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 6A I(C) | TO-220AB 晶体管|晶体管|达林顿|叩| 80V的五(巴西)总裁| 6A条一(c)| TO - 220AB现有
|
Vishay Intertechnology, Inc.
|
LB1275 |
7-Unit, Darlington Transistor Array 7-Unit Darlington Transistor Array 7-Unit,Darlington Transistor Array(7单元达林顿晶体管阵列)
|
SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd.
|
LB1274 |
6-Unit / Darlington Transistor Array
|
Sanyo
|